Takashi Taniguchi
11 papers · Latest:
Optical signatures of antiferromagnetic correlations in a strongly interacting quantum Hall MoSe2 monolayer
This paper reveals antiferromagnetic correlations in a strongly interacting quantum Hall MoSe2 monolayer, challenging conventional ferromagnetism.
Field-induced asymmetric band flattening and ideal quantum geometry in rhombohedral graphene
This paper visualizes field-induced asymmetric band flattening in rhombohedral graphene, linking it to quantum geometry and topological phases.
Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses
This paper characterizes the spin coherence of boron vacancy defects in hBN using broadband microwave pulses, revealing T2* and T2 values.
Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices
This paper explores tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices, revealing new topological states.
Van Hove Singularity-Driven Topological Magnetism in Twisted MoTe2
This paper reveals Van Hove singularity-driven topological magnetism in twisted MoTe2, leading to novel correlated phases and chiral spin textures.
Cryogenic shock exfoliation for ultrahigh mobility rhombohedral graphite nanoelectronics
New cryogenic shock exfoliation produces large, high-quality rhombohedral graphene for advanced nanoelectronics, enabling tunable correlated electron physics.
The Origin of Linearly-Polarized Photoluminescence in WS2/WSe2 Moiré superlattices
Strain, not valley-contrast selection rules, drives linearly polarized photoluminescence in WS2/WSe2 moiré superlattices, crucial for optical readout.
Persistence of large and gate-tunable anisotropic magnetoresistance in an atomically thin antiferromagnet
Researchers demonstrated gate-tunable anisotropic magnetoresistance in atomically thin NiPS3, enabling electrical readout of antiferromagnetic states.
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
This paper reveals that sub-nanometer exciton transfer in MoSe2/graphene heterostructures is governed by charge tunneling, not Förster-type energy transfer.
Gate-Reconfigurable Single- and Double-Dot Transport in Trilayer MoSe2
Trilayer MoSe2 devices demonstrate gate-reconfigurable single- and double-quantum-dot transport, enabling tunable quantum dot configurations.
Valley-controlled many-body exciton interactions in monolayer WSe$_2$ phototransistors
This paper demonstrates all-optical control of many-body exciton interactions in monolayer WSe2 using valley-selective excitation.
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