Gate-Reconfigurable Single- and Double-Dot Transport in Trilayer MoSe2
Seungwoo Lee, Minjun Park, Yunsang Noh, Sung Jin An, Soyun Kim + 6 more
TLDR
Trilayer MoSe2 devices demonstrate gate-reconfigurable single- and double-quantum-dot transport, enabling tunable quantum dot configurations.
Key contributions
- Fabricated a trilayer MoSe2 device enabling gate-controlled quantum-dot transport.
- Observed single-dot Coulomb blockade in the low-backgate regime.
- Achieved gate-reconfigurable double-dot configurations with tunable interdot coupling.
Why it matters
This research establishes trilayer MoSe2 as a promising platform for gate-reconfigurable quantum dots. Such tunable quantum dot systems are crucial for advancing quantum computing and spintronics, offering flexible control over quantum states in novel device architectures.
Original Abstract
We report gate-controlled quantum-dot transport in a trilayer MoSe2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low-backgate regime, bias spectroscopy shows regular Coulomb-blockade diamonds characteristic of single-dot transport. As backgate is increased, additional low-bias structure develops beyond a simple single-dot pattern, indicating that the electrostatic landscape is reshaped and that a second dot becomes active in transport. In the higher-backgate regime, plunger-gate tuning and two-gate measurements establish a gate-reconfigurable double-dot configuration with two non-equivalent dots whose relative alignment and interdot coupling evolve with gate voltage. These results indicate that trilayer MoSe2 supports electrically reconfigurable single- and double-dot transport in the present device architecture.
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