ArXiv TLDR

Magnetic Brightening and Nanoscale Imaging of Spin-Polarized Helical Edge Modes

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2605.04883

Samuel Haeuser, Richard H. J. Kim, Lin-Lin Wang, Thomas Koschny, Pedro M. Lozano + 7 more

cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.str-el

TLDR

Researchers visualize and magnetically tune spin-polarized helical edge modes at the nanoscale, showing robust high-frequency conduction.

Key contributions

  • Developed cm-IR-sSNOM for nanoscale imaging of spin-polarized helical edge modes.
  • Revealed magnetic field-induced near-field conductivity and quantum spin Hall spin-splitting.
  • Showed infrared edge response scales linearly with layers, robust to magnetic field gaps.
  • Contrasts with DC/microwave transport where magnetic fields disrupt edge conduction.

Why it matters

This work demonstrates magnetically tunable, topologically robust high-frequency edge modes. It opens a pathway toward ultralow-loss nanoscale interconnects and quantum logic architectures for next-generation microelectronics, spintronics, and quantum information science.

Original Abstract

Efficient sub-10 nm electric transport remains a major challenge for nanoelectronics due to high losses and impedance mismatches in conventional Drude metals. Despite their promise of dissipationless, reflection-free conduction, topologically protected chiral edge modes remain little explored in their nanoscale spin polarized transport-particularly regarding real-space visualization, magnetic field tunability, and high-frequency edge conductivity. Here, we report magnetic brightening and nanoscale visualization of highly spin-polarizable infrared helical edge states using cryogenic magneto-infrared scattering-type scanning near-field optical microscopy (cm-IR-sSNOM). Our measurements reveal magnetic field-induced near-field conductivity at step edges, uncovering quantum spin Hall spin-splitting modes with enhanced infrared polarizability and slightly narrowed near-field profiles. In addition, the infrared edge electrodynamic response scales nearly linearly with atomic layer number, providing compelling evidence that magnetic-field-induced gaps do not disrupt individual-layer edge states at energies of around 100 meV. These results sharply contrast with microwave and DC transport, where even small magnetically induced gaps decrease edge conduction. Magnetically tunable, topologically robust high-frequency edge modes open a pathway toward ultralow-loss nanoscale interconnects and quantum logic architectures for next-generation microelectronics, spintronics and quantum information science.

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