Spin-orbit interaction in core-shell semiconductor-metal nanowires
Tudor-Gabriel Dumitru, Anna Sitek, Gunnar Thorgilsson, Sigurdur I. Erlingsson, Andrei Manolescu
TLDR
This paper theoretically studies spin-orbit interaction in hexagonal core-shell semiconductor-metal nanowires, analyzing interface potential effects on coupling.
Key contributions
- Theoretically investigates spin-orbit interaction (SOI) in tubular semiconductor nanowires.
- Focuses on a core-shell structure with an inner semiconductor and an outer metallic shell.
- Examines how interface potentials affect SOI strength and electron wave function localization.
- Utilizes a k-dot-p derived model for nanowires with hexagonal cross-section.
Why it matters
Understanding spin-orbit interaction in such nanostructures is crucial for spintronic device development. This research offers theoretical insights into how material interfaces influence these quantum effects, guiding future experimental designs and material engineering.
Original Abstract
We study theoretically the spin-orbit interaction of electrons confined in a tubular semiconductor nanowire, between an inner semiconductor core and an outer metallic extra shell. A band off-offset potential is present at the inner semiconductor-semiconductor interface and a more complex potential barrier at the outer metal-semiconductor contact. The cross section of the nanowire has a hexagonal geometry. We use a model derived from the k-dot-p method, and discuss the effects of the interface potentials on the strength of the spin-orbit coupling and on the localization of the wave functions within the semiconductor shell
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