ArXiv TLDR

Strain engineering of Andreev spin qubits in Germanium

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2604.22650

Vittorio Coppini, Patrick Del Vecchio, Antonio L. R. Manesco, Anton Akhmerov, Valla Fatemi + 2 more

cond-mat.mes-hall

TLDR

Compressive strain suppresses spin splitting in germanium Andreev qubits; unstrained/tensile strain can enable GHz spin splittings and fast quantum gates.

Key contributions

  • Identifies compressive strain as the key mechanism suppressing spin splitting in Ge Josephson junctions.
  • Proposes unstrained and tensile-strained Ge heterostructures to significantly enhance spin-orbit effects.
  • Predicts GHz spin splittings (2 orders > current) and 100ns all-electric quantum gates via simulation.
  • Establishes strain engineering as a critical design principle for germanium Andreev spin qubits.

Why it matters

This paper reveals compressive strain suppresses spin splitting in germanium Andreev qubits. It proposes strain engineering (unstrained/tensile) to enable GHz spin splittings and fast quantum gates, crucial for robust germanium quantum computing.

Original Abstract

Planar germanium heterostructures are promising hosts for hybrid quantum devices due to their compatibility with superconductors, low material disorder, and relaxed fabrication constraints. Also, the potentially low density of nuclear spins and strong spin-orbit interaction make germanium attractive for coherent spin physics. However, recent microwave spectroscopy experiments were unable to resolve a spin-splitting of bound states in germanium Josephson junctions, the prerequisite for defining and controlling Andreev spin qubits. Here, we argue that compressive strain is the key mechanism suppressing spin splitting in current devices. Furthermore, we propose unstrained and tensile-strained heterostructures, fully compatible with state-of-the-art growth technology, that significantly enhance the relevant spin-orbit effect. By numerically simulating ballistic Josephson junctions, we predict spin splittings comfortably in the GHz range, more than 2 orders of magnitude larger than compressively strained cases, and all-electric quantum gates in a hundred nanoseconds. Our results establish strain engineering as a key design principle for realizing Andreev spin qubits in germanium-based devices.

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