Electric-Field Control of Quantum Tunneling Regimes in Focused He-Ion-Beam-Irradiated Oxide Interfaces
Yu Chen, Maria D'Antuono, Robin Hutt, Cesar Magen, Edward Goldobin + 4 more
TLDR
Researchers used He-ion beams to create tunable quantum tunneling barriers in oxide interfaces, enabling electric-field control.
Key contributions
- He FIB irradiation creates nanoscale potential barriers (TFETs) at oxide interfaces.
- Localized lattice deformation forms these barriers, confirmed by high-resolution microscopy and strain mapping.
- Electrostatic backgating continuously tunes barrier profiles at low temperatures without degrading 2DES electrodes.
- Demonstrates controlled access to thermionic emission, direct, and Fowler-Nordheim tunneling in a single device.
Why it matters
This research pioneers the use of He FIB for nanoscale engineering of complex-oxide interfaces. It offers a unique platform to study and control quantum tunneling, paving the way for advanced quantum electronic devices.
Original Abstract
Helium focused ion beam irradiation enables the fabrication of tunnel field-effect transistors based on two-dimensional electron systems (2DESs) at an oxide interface.High resolution scanning transmission electron microscopy and strain mapping reveal localized lattice deformation confined to the irradiated regions, which act as nanoscale potential barriers. The barrier profile can be continuously tuned by electrostatic backgating at low temperature without degrading the electronic properties of the 2DES electrodes. Transport measurements demonstrate controlled access to thermionic emission, direct tunneling, and Fowler-Nordheim tunneling within a single device architecture. These results establish He FIB irradiation as a powerful tool for nanoscale functional engineering of complex-oxide interfaces and provide a platform for exploring gate-tunable quantum tunneling phenomena.
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