ArXiv TLDR

DC Cryogenic Modeling of Open-Source SkyWater 130 nm MOSFETs at 77 K Using BSIM4

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2604.21625

F. Beall, A. Rimal, O. Seidel, Y. Mei, A. D. McDonald + 5 more

cond-mat.mes-hallhep-ex

TLDR

This paper presents a SPICE-compatible BSIM4 model for SkyWater 130nm MOSFETs at 77 K, enabling open-source cryogenic circuit design.

Key contributions

  • Characterized SkyWater 130nm low-threshold voltage MOSFETs at 77 K.
  • Developed a SPICE-compatible, isothermal BSIM4 model for SkyWater 130nm at 77 K.
  • Model shows ~20% relative RMS error at 77 K with no drain voltage dependence.
  • Publicly released cryogenic device models on Github to enable open-source design.

Why it matters

This work provides crucial open-source BSIM4 models for SkyWater 130nm MOSFETs at 77 K, essential for high-energy physics and other cryogenic applications. By making these models publicly available, it significantly lowers the barrier for designing reliable, low-power electronics for extreme environments.

Original Abstract

Cryogenic applications in high-energy physics (HEP) demand reliable, low-power CMOS electronics capable of operating at liquid nitrogen temperatures (77 K). The open-source SkyWater 130nm (SKY130) CMOS process has previously been shown to operate at temperatures as low as 4 K making it a promising candidate for HEP applications. In this work, we characterize and model SKY130 low-threshold voltage transistors at 77 K, which is a temperature commonly used in modeling applications for liquid argon detectors. DC characteristic measurements were performed at both room temperature and liquid nitrogen temperature. We created a cryogenic modeling approach to produce a SPICE-compatible, isothermal BSIM4-based model for select transistor sizes at 77 K. The resulting model agrees with data at 77 K with an average error on the order of 20% (relative RMS) and shows no dependence on drain voltage. Due to the open-source nature of SKY130, we have made our models publicly available on Github. We hope this work will continue the trend for democratizing circuit design at cryogenic temperatures in high-energy physics by enabling open access to accurate cryogenic CMOS device models at 77 K.

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