ArXiv TLDR

Polarized light Raman scattering by an atom near an ultrathin periodically aligned carbon nanotube film

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2604.17246

SK Firoz Islam, Michael Dean Pugh, Igor V. Bondarev

cond-mat.mes-hall

TLDR

This paper theoretically studies Raman scattering enhancement (up to 10^4) for an atom near an ultrathin carbon nanotube film, for both p- and s-polarized light.

Key contributions

  • Theoretically studies Raman scattering for a two-level atom near a carbon nanotube film.
  • Provides a unified model for quantum near-field enhancement in anisotropic metasurfaces.
  • Analyzes the impact of light polarization and incidence plane on scattering.
  • Shows Raman scattering enhancement up to 10^4 for both p- and s-polarized light.

Why it matters

This work reveals a significant 10^4 enhancement of Raman scattering near carbon nanotube films, applicable to both p- and s-polarized light. This breakthrough could lead to advanced sensing technologies and improved spectroscopic methods, leveraging anisotropic metasurfaces.

Original Abstract

We present a systematic theoretical study of the Raman scattering effect for a two-level atomic system in near proximity of an ultrathin dielectric film with an embedded parallel array of periodically aligned single-wall semiconducting carbon nanotubes. More generally, our model provides a unified description of the quantum near-field medium-assisted enhancement effects for in-plane anisotropic metasurfaces, of which ultrathin periodically aligned carbon nanotube films are the representative example. Particular attention is given to incoming photon parameters of the external light radiation such as polarization and incidence plane orientation relative to the main anisotropy axis (nanotube alignment axis). By explicitly deriving the Raman scattering cross-section, we establish that for the two-level atomic system in the near-field zone of the carbon nanotube metasurface the effect can be enhanced by a factor of up to 10^4, not only for p-polarized but for s-polarized light as well.

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