A new helical InSeI polymorph: crystal structure and polarized Raman spectroscopy study
Lucía Olano-Vegas, Davide Spirito, Evgeny Modin, Pavlo Solokha, Sergio Marras + 5 more
TLDR
This paper reveals a new helical InSeI polymorph's crystal structure and lattice dynamics using polarized Raman spectroscopy.
Key contributions
- Discovered and characterized the crystal structure of a new helical InSeI polymorph.
- Studied lattice dynamics in bulk crystals and nanowires using polarized Raman spectroscopy.
- Determined helical chain orientation and distinguished crystallographic planes via linear polarized Raman.
- Found no chiral phonons in InSeI, despite its helical chains and anisotropic structure.
Why it matters
Understanding the crystal structure and lattice dynamics of InSeI is crucial for developing advanced optoelectronic and spintronic devices. This work provides fundamental insights into its anisotropic behavior, paving the way for orientation-dependent applications.
Original Abstract
Tetragonal InSeI is an interesting low-dimensional metal chalcohalide due to its composition and anisotropic crystal structure composed of helical chains, which give rise to optoelectronic properties with potential application in photodetectors, optical thermometers, and spintronic devices. However, experimental works lack on the study of its anisotropic or chiral behavior. Here we present the crystal structure of an unreported InSeI polymorph and study its lattice dynamics in bulk crystals and exfoliated nanowires by polarized Raman spectroscopy for two non-equivalent crystallographic planes. We determine the orientation of the helical chains and distinguish between crystallographic planes by linearly polarized measurements, evaluating the angle-dependent intensity of the modes, which allows assigning each mode to its representation. Circularly polarized Raman measurements do not reveal chiral phonons, despite the helical chains and anisotropic crystal structure. These results offer insight into the crystal structure of InSeI, which is fundamental for the fabrication of orientation-dependent optoelectronic and spintronic devices.
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